Semiempirical model for nanoscale device simulations
نویسندگان
چکیده
منابع مشابه
Semiempirical Model for Adsorption of Binary Mixtures
As it can clearly be observed in Figure 1a and 2a in the paper, the total coverage of the biggest species (in this case k = 6) has a maximum and later decreases to a limit value. This behavior is known as adsorption preference reversal (APR) and has also been observed in theoretical calculations and Monte Carlo simulations [1, 2]. The APR phenomenon usually is attributed to presence of repulsiv...
متن کاملMonte Carlo Device Simulations
As semiconductor devices are scaled into nanoscale regime, first velocity saturation starts to limit the carrier mobility due to pronounced intervalley scattering, and when the device dimensions are scaled to 100 nm and below, velocity overshoot starts to dominate the device behavior leading to larger ON-state currents. Alongside with the developments in the semiconductor nanotechnology, in rec...
متن کاملA Device Independent Router Model: from Measurements to Simulations
Chertov, Roman Ph.D., Purdue University, May, 2008. A Device Independent Router Model: From Measurements to Simulations. Major Professors: Sonia Fahmy and Ness B. Shroff. Simulation, emulation, and wide-area testbeds exhibit different tradeoffs with respect to fidelity, scalability, and manageability. Network security and network planning/dimensioning experiments introduce additional requiremen...
متن کاملSemiempirical model of positron scattering and annihilation
A two-parameter semiempirical theory of positron scattering and annihilation is developed and used to investigate the behavior of positrons interacting with the rare gases and metal vapors. The two-parameter theory is able to do a reasonable job of reproducing existing cross section and annihilation data for the rare gases. A model-potential calculation that correctly predicts the behavior of t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2010
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.82.075420